Silicon-based spin-qubit quantum magnetometer and radar system with all electrical control

Abstract

The present invention relates to a spin-qubit quantum magnetometer anti radar system entirely implemented in silicon and with full electrical control. By default, each detection clement of the silicon-based spin-qubit quantum magnetometer and radar system of the invention is built around a Field Effect Transistor (PET) on silicon over insulator with a back-gate as well as two front gates, which can be adjacent to one another along the Drain-Source FET channel or alternatively placed across that same channel and facing each other as corner gates. The silicon-based spin-qubit quantum magnetometer and radar system of the invention is particularly well-suited for any type of extremely-sensitive radar applications but but can also be applied for mineral/mining prospecting, discovery of distant astronomical objects, mine and metal detectors, tomography/MRI (Magnetic Resonance Imaging).

Dependencies are inferred from the claim text.