Semiconductor device

A semiconductor device comprising:

• an insulating substrate;
• a first insulating layer disposed above the insulating substrate;
• an island-shaped oxide semiconductor disposed on the first insulating layer;
• a second insulating layer which covers the oxide semiconductor;
• a gate electrode disposed on the second insulating layer;
• a source electrode and a drain electrode, which are in contact with the oxide semiconductor,
• the oxide semiconductor including:
• a first edge portion intersecting the gate electrode;
• a second edge portion on an opposite side to the first edge portion, which intersects the gate electrode;
• a first area extending along a first direction between the first edge portion and the second edge portion and overlapping the gate electrode;
• a second area located between the first area and the source electrode and along the first edge portion;
• a third area located between the first area and the source electrode and along the second edge portion;
• a fourth area located between the first area and the drain electrode and along the first edge portion;
• a fifth area located between the first area and the drain electrode and along the second edge portion;
• a sixth area surrounded by the first area, the second area and the third area;
• and
• a seventh area surrounded by the first area, the fourth area, and the fifth area, and
• the first area, the second area, the third area, the fourth area and the fifth area having a higher resistance as compared to the sixth area and the seventh area.