Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChi-Hsuan Tang, Chung-Ting Huang, Bo-Shiun Chen, Chun-Jen Chen, Yu-Shu Lin
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Abstract
A method for fabricating a semiconductor device includes the steps of first forming a gate structure on a substrate, forming a first spacer adjacent to the gate structure, forming a second spacer adjacent to the first spacer, forming an epitaxial layer adjacent to the second spacer, forming a second cap layer on the epitaxial layer, and then forming a first cap layer on the second cap layer. Preferably, a top surface of the first cap layer includes a V-shape and the first cap layer and the second cap layer are made of different materials.
Claims18
A method for fabricating a semiconductor device, comprising:
- forming a gate structure on a substrate;
- forming an epitaxial layer adjacent to the gate structure;
- and
- forming a first cap layer on the epitaxial layer, wherein a top surface of the first cap layer comprises a V-shape and a bottom surface of the first cap layer comprises a planar surface higher than a top surface of the substrate.
A semiconductor device, comprising:
- a gate structure on a substrate;
- an epitaxial layer adjacent to the gate structure;
- and
- a first cap layer on the epitaxial layer, wherein a top surface of the first cap layer comprises a V-shape and a bottom surface of the first cap layer comprises a planar surface higher than a top surface of the substrate.
Dependencies are inferred from the claim text.