Semiconductor device
AssigneeDenso Corporation
InventorKenji KOUNO
Life of this patent
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Abstract
A semiconductor device includes a source electrode, a drain electrode and a gate. The gate controls a current flowing between the source electrode and the drain electrode. Capacitance between the gate and the drain electrode is first capacitance. Capacitance between the gate and the source electrode is second capacitance. A sum of the first capacitance and the second capacitance is equal to third capacitance. Total switching loss is a sum of first switching loss and second switching loss. The first switching loss is defined by a current variation rate, and the second switching loss is defined by a voltage variation rate. A capacitance ratio of the first capacitance to the third capacitance is set to a ratio to satisfying a relationship that the total switching loss is smaller than a predetermined value.
Claims5
A semiconductor device comprising:
- a source electrode;
- a drain electrode;
- and
- a gate configured to control a current flowing between the source electrode and the drain electrode,
- wherein capacitance between the gate and the drain electrode is first capacitance,
- wherein capacitance between the gate and the source electrode is second capacitance,
- wherein a sum of the first capacitance and the second capacitance is equal to third capacitance,
- wherein total switching loss is a sum of first switching loss and second switching loss,
- wherein the first switching loss is defined by a rate of variation in the current, and the second switching loss is defined by a rate of variation in a voltage, and
- wherein a capacitance ratio of the first capacitance to the third capacitance is set to a ratio satisfying a relationship that the total switching loss is smaller than a predetermined value.
Dependencies are inferred from the claim text.