Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode, a direction from the first electrode toward the second electrode being along a first direction;
• a third electrode, the third electrode including a third electrode end portion and a third electrode other-end portion, the third electrode end portion being between the first electrode and the third electrode other-end portion in the first direction;
• a first conductive member, the first conductive member including a first conductive member end portion and a first conductive member other-end portion, the first conductive member end portion being between the first electrode and the first conductive member other-end portion in the first direction, a position in the first direction of the first conductive member end portion being between a position in the first direction of the first electrode and a position in the first direction of the third electrode end portion;
• a semiconductor member, the semiconductor member including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the first conductivity type;
• and
• a first insulating member,
• the first semiconductor region including a first partial region and a second partial region,
• the first partial region being between the first electrode and the second electrode in the first direction,
• the second semiconductor region being between the first partial region and the third semiconductor region in the first direction,
• the third semiconductor region being electrically connected with the second electrode,
• a second direction from a portion of the third electrode toward the second semiconductor region crossing the first direction,
• a direction from an other portion of the third electrode toward a portion of the first partial region being along the second direction,
• a direction from the second partial region toward the first conductive member being along the first direction,
• a direction from the first conductive member toward the first partial region being along the second direction,
• the fourth semiconductor region being located between the first electrode and the first semiconductor region in the first direction,
• the fourth semiconductor region being electrically connected with the first electrode,
• a carrier concentration of the first conductivity type in the fourth semiconductor region being greater than a carrier concentration of the first conductivity type in the first semiconductor region,
• the first partial region including a first position,
• a direction from the first conductive member end portion toward the first position being along the second direction,
• the fourth semiconductor region including at least one first element selected from the group consisting of hydrogen, helium, argon, and carbon,
• the first position not including the first element, or a concentration of the first element at the first position being less than a concentration of the first element in the fourth semiconductor region,
• at least a portion of the first insulating member being between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.