Semiconductor device and producing method thereof
AssigneeFujitsu Limited
InventorsShirou Ozaki, Junji Kotani
Life of this patent
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Abstract
A semiconductor device is provided. In particular, a semiconductor device is disclosed as including an electron transit layer; an electron supply layer disposed on or above the electron transit layer, the electron supply layer inducing a two-dimensional electron gas in the electron transit layer; a source electrode disposed on or above the electron supply layer; a drain electrode disposed on or above the electron supply layer; a gate electrode between the source electrode and the drain electrode; and an insulating film that is disposed in a region between the gate electrode and the drain electrode, and the region being closer to the gate electrode than to the drain electrode. The insulating film includes a nitrosyl group.
Claims7
A semiconductor device, comprising:
- an electron transit layer;
- an electron supply layer disposed on or above the electron transit layer, the electron supply layer inducing a two-dimensional electron gas in the electron transit layer;
- a source electrode disposed on or above the electron supply layer;
- a drain electrode disposed on or above the electron supply layer;
- a gate electrode disposed on or above the electron supply layer, the gate electrode being positioned between the source electrode and the drain electrode;
- and
- an insulating film that includes a nitrosyl group, the insulating film being disposed in a region that is positioned on or above the electron supply layer and between the gate electrode and the drain electrode, and the region being closer to the gate electrode than to the drain electrode.
A method for producing a semiconductor device, the method comprising:
- forming an electron transit layer;
- forming an electron supply layer on or above the electron transit layer, the electron supply layer inducing a two-dimensional electron gas in the electron transit layer;
- forming a source electrode in a source electrode region that is on or above the electron supply layer;
- forming a drain electrode in a drain electrode region that is on or above the electron supply layer;
- forming a gate electrode in a gate electrode region that is between the source electrode region and the drain electrode region;
- and
- forming an insulating film in a region on or above the electron supply layer, the the region being positioned between the gate electrode region and the drain electrode region, and the region being closer to the gate electrode region than to the drain electrode region, the insulating film including a nitrosyl group;
- wherein
- the forming of the insulating film is a process in which aluminum nitride that includes nitrogen atoms bonded to hydrogen atoms is formed on or above the electron supply layer, and the formed aluminum nitride is oxidized by hydroxyl radicals.
Dependencies are inferred from the claim text.