Hemt and method of fabricating the same
AssigneeUnited Microelectronics Corp.
InventorPo-Yu Yang
Life of this patent
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Abstract
An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from the composition of the second III-V compound layer. A third III-V compound layer is disposed on the second III-V compound layer. The first III-V compound layer and the third III-V compound layer are composed of the same group III-V elements. The third III-V compound layer includes a body and numerous finger parts. Each of the finger parts is connected to the body. All finger parts are parallel to each other and do not contact each other. A source electrode, a drain electrode and a gate electrode are disposed on the first III-V compound layer.
Claims20
A high electron mobility transistor (HEMT), comprising:
- a first III-V compound layer;
- a second III-V compound layer disposed on the first III-V compound layer, wherein a composition of the first III-V compound layer is different from a composition of the second III-V compound layer;
- a third III-V compound layer disposed on the second III-V compound layer, wherein the third III-V compound layer comprises a body and a plurality of finger parts, each of the finger parts is connected to the body, all finger parts are parallel to each other and do not contact each other;
- a source electrode disposed at one side of the body and contacting the first III-V compound layer;
- a drain electrode disposed at another side of the body and contacting the first III-V compound layer;
- and
- a gate electrode disposed directly on the body.
A fabricating method of a high electron mobility transistor (HEMT), comprising:
- forming a first III-V compound layer and a second III-V compound layer, wherein the second III-V compound layer is disposed on the first III-V compound layer, and a composition of the first III-V compound layer is different from a composition of the second III-V compound layer;
- forming a third III-V compound layer disposed on the second III-V compound layer, wherein the third III-V compound layer comprises a body and a plurality of finger parts, each of the finger parts is connected to the body, all finger parts are parallel to each other;
- and
- forming a source electrode, a drain electrode and a gate electrode, wherein the source electrode is disposed at one side of the body, the drain electrode is disposed at another side of the body and the gate electrode is disposed directly on the body.
Dependencies are inferred from the claim text.