Power semiconductor device and power semiconductor chip

A power semiconductor device comprising:

• a semiconductor layer;
• at least a pair of first trenches recessed into the semiconductor layer from a surface of the semiconductor layer;
• a drift region, having a first conductivity type, disposed in the semiconductor layer to extend from a lower side of the at least pair of first trenches to between the at least pair of first trenches such that a vertical charge transport path is provided;
• a well region disposed in the semiconductor layer on the drift region between the at least pair of first trenches, and having a second conductivity type;
• an emitter region disposed on the well region and having the first conductivity type;
• a floating electrode layer disposed in each of the at least pair of first trenches;
• at least one second trench extending through the well region to be in contact with the drift region;
• and
• a gate electrode layer disposed in the at least one second trench.