Semiconductor device and method of manufacturing semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate on which an emitter electrode and a gate electrode are provided;
• a base layer of a first conductivity type which is provided on an upper surface side of the semiconductor substrate;
• a source layer of a second conductivity type which is provided on the upper surface side of the base layer;
• an active portion which is provided on an insulating film which is an inner surface of a first trench penetrating the base layer and the source layer, the active portion being connected to the gate electrode;
• a first trench contact portion and a second trench contact portion provided to face a first side portion and a second side portion of the first trench, respectively, in a plan view, the emitter electrode being provided inside each of the first trench contact portion and the second trench contact portion;
• a first contact layer of the first conductivity type which is connected to a lower portion of the first trench contact portion and has an impurity concentration of the first conductivity type which is higher than that of the base layer;
• a second contact layer of the first conductivity type which is connected to a lower portion of the second trench contact portion and has an impurity concentration of the first conductivity type which is higher than that of the base layer;
• and
• a collector electrode provided on a lower surface of the semiconductor substrate,
• wherein the distance between the first side portion and the first trench contact portion is larger than that between the second side portion and the second trench contact portion in a plan view, and
• the first contact layer is separated from the first side portion and the second contact layer is connected to the second side portion in a cross section.