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US 2022/0190142 A1Published application
Method of manufacturing transistor
AssigneeSamsung Display Co., Ltd.
InventorsJAEWOO JEONG, Jong Oh SEO
Life of this patent
Estimating the term…
Abstract
A method of manufacturing transistor may include forming an active layer on a base substrate, forming a sacrificial layer on the active layer, doping a first dopant ion in the active layer through a first ion implantation process, removing the sacrificial layer, forming a gate insulating layer; and forming a gate electrode on the gate insulating layer.
Claims19
A method of manufacturing transistor, the method comprising:
- forming an active layer on a base substrate;
- forming a sacrificial layer on the active layer;
- doping a first dopant ion in the active layer through a first ion implantation process;
- removing the sacrificial layer;
- forming a gate insulating layer;
- and
- forming a gate electrode on the gate insulating layer.
4 more elements
A method of manufacturing transistor, the method comprising:
- forming an active layer on a base substrate;
- forming a sacrificial layer on the active layer;
- doping a first dopant ion in the active layer through a first ion implantation process;
- doping a second dopant ion in the active layer through a second ion implantation process;
- removing the sacrificial layer;
- forming a gate insulating layer;
- and
- forming a gate electrode on the gate insulating layer.
5 more elements
Dependencies are inferred from the claim text.