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US 2022/0190140 A1Published application
Bipolar transistor
AssigneesSTMicroelectronics (Crolles 2) SAS, STMicroelectronics S.r.l.
InventorsAlexis GAUTHIER, Pascal CHEVALIER
Life of this patent
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Abstract
A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.
Claims14
A method of manufacturing a bipolar transistor, comprising:
- forming a first cavity in a semiconductor substrate;
- depositing a doped polysilicon layer on walls and a bottom of the first cavity to form a first portion of a collector;
- filling a remaining part of the first cavity with an insulating material to form an insulating trench over the first portion of the collector;
- and
- forming a second portion of the collector from semiconductor material which fills a second cavity that crosses through the insulating material of the insulating trench, wherein a bottom of the second portion of the collector is in physical contact with the first portion of the collector.
2 more elements
A bipolar transistor, comprising:
- a semiconductor substrate including a first cavity;
- a doped polysilicon layer on walls and a bottom of the first cavity to form a first portion of a collector in a part of the first cavity;
- an insulating material filling a remaining part of the first cavity to form an insulating trench over the first portion of the collector;
- and
- a semiconductor material in a second cavity which crosses through the insulating trench forming a second portion of the collector for the bipolar transistor, wherein a bottom of the second portion of the collector is in physical contact with a top of the first portion of the collector.
2 more elements
Dependencies are inferred from the claim text.