Semiconductor structure and method for fabricating the same
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorsHaiyang ZHANG, Panpan LIU
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Abstract
Semiconductor structure and fabrication method are provided. The semiconductor structure includes a substrate, including a first region and a second region; a plurality of fins, formed on the first region of the substrate; a first isolation structure, formed on the first region between adjacent fins and on the second region of the substrate; a second isolation structure, formed in each fin and in the first isolation structure, over the first region of the substrate; and a power rail, formed in the isolation structure and partially in the substrate of the second region.
Claims10
A semiconductor structure, comprising:
- a substrate, including a first region and a second region;
- a plurality of fins, formed on the first region of the substrate;
- a first isolation structure, formed on the first region between adjacent fins and on the second region of the substrate;
- a second isolation structure, formed in each fin and in the first isolation structure, over the first region of the substrate;
- and
- a power rail, formed in the isolation structure and partially in the substrate of the second region.
Dependencies are inferred from the claim text.