Semiconductor device, inverter circuit, drive device, vehicle, and elevator

A semiconductor device comprising:

• a silicon carbide layer having a first plane parallel to a first direction and a second direction orthogonal to the first direction, and a second plane facing the first plane, the silicon carbide layer including a first trench provided on a side of the first plane and extending in the first direction, a second trench provided on the side of the first plane, the second trench extending in the first direction, and the second trench separated from the first trench in the second direction, an n-type first silicon carbide region, a p-type second silicon carbide region provided between the first silicon carbide region and the first plane and provided between the first trench and the second trench, and an n-type third silicon carbide region provided between the second silicon carbide region and the first plane and provided between the first trench and the second trench;
• a gate electrode provided in the first trench and the second trench;
• a gate insulating layer provided between the gate electrode and the silicon carbide layer;
• a gate wiring extending in the second direction, the gate wiring intersecting with the first trench and the second trench, the gate wiring connected to the gate electrode, and the gate wiring made of a same material as the gate electrode;
• a first electrode provided on the side of the first plane of the silicon carbide layer and electrically connected to the third silicon carbide region;
• a second electrode provided on a side of the second plane of the silicon carbide layer;
• and
• an interlayer insulating layer provided between the gate electrode and the first electrode, wherein
• neither the gate electrode nor the gate wiring is present between an end of the first trench in the first direction and the interlayer insulating layer.