Contact over active gate structures with tapered gate or trench contact for advanced integrated circuit structure fabrication

An integrated circuit structure, comprising:

• a plurality of gate structures above a substrate, wherein individual ones of the plurality gate of structures have thereon a conductive cap between sidewall spacers;
• a plurality of conductive trench contact structures alternating with the plurality of gate structures, wherein individual ones of the plurality of conductive trench contact structures have thereon a conductive cap between sidewall spacers;
• an etch stop layer over the plurality of gate structures and over the plurality of conductive trench contact structures;
• an interlayer dielectric material over the etch stop layer;
• an opening in the interlayer dielectric material and in the etch stop layer, the opening exposing the conductive cap and sidewall spacers on one of the plurality of conductive trench contact structures;
• and
• a conductive structure in the opening, the conductive structure in direct contact with the conductive cap and sidewall spacers on the one of the conductive trench contact structures.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of gate structures above a substrate, wherein individual ones of the plurality gate of structures have thereon a conductive cap between sidewall spacers;
• a plurality of conductive trench contact structures alternating with the plurality of gate structures, wherein individual ones of the plurality of conductive trench contact structures have thereon a conductive cap between sidewall spacers;
• an etch stop layer over the plurality of gate structures and over the plurality of conductive trench contact structures;
• an interlayer dielectric material over the etch stop layer;
• an opening in the interlayer dielectric material and in the etch stop layer, the opening exposing the conductive cap and sidewall spacers on one of the plurality of gate structures;
• and
• a conductive structure in the opening, the conductive structure in direct contact with the conductive cap and sidewall spacers on the one of the plurality of gate structures.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a plurality of gate structures above a substrate, wherein individual ones of the plurality gate of structures have thereon a conductive cap between sidewall spacers;
• a plurality of conductive trench contact structures alternating with the plurality of gate structures, wherein individual ones of the plurality of conductive trench contact structures have thereon a conductive cap between sidewall spacers;
• an etch stop layer over the plurality of gate structures and over the plurality of conductive trench contact structures;
• an interlayer dielectric material over the etch stop layer;
• an opening in the interlayer dielectric material and in the etch stop layer, the opening exposing the conductive cap and sidewall spacers on one of the plurality of conductive trench contact structures;
• and
• a conductive structure in the opening, the conductive structure in direct contact with the conductive cap and sidewall spacers on the one of the conductive trench contact structures.