Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Wen HUANG, Chung-Ting KO, Hong-Hsien KE, Chia-Hui LIN, Tai-Chun HUANG
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a gate structure, a source/drain structure, a barrier layer, and a glue layer. The gate structure is over a fin structure. The source/drain structure is in the fin structure and adjacent to the gate structure. The barrier layer is over the source/drain structure. The glue layer is adjacent to the barrier layer. The glue layer has an extending portion in direct contact with the gate structure.
Claims20
A semiconductor structure, comprising:
- a gate structure over a fin structure;
- a source/drain structure in the fin structure and adjacent to the gate structure;
- a barrier layer over the source/drain structure;
- and
- a glue layer adjacent to the barrier layer;
- wherein the glue layer has an extending portion in direct contact with the gate structure.
A semiconductor structure, comprising:
- a gate structure over a fin structure;
- a source/drain structure in the fin structure and adjacent to the gate structure;
- a dielectric layer over the gate structure and the source/drain structure;
- a glue layer on a top surface of the source/drain structure;
- a barrier layer on the top surface of the source/drain structure;
- and
- an additional barrier layer adjacent to the barrier layer;
- wherein the barrier layer and the additional barrier layer form a multi-layer barrier layer structure between the dielectric layer and the glue layer.
A semiconductor structure, comprising:
- a gate structure over a fin structure;
- a source/drain structure in the fin structure and adjacent to the gate structure;
- a dielectric layer over the gate structure and the source/drain structure;
- a contact structure over the source/drain structure;
- and
- a barrier layer over the source/drain structure;
- wherein the barrier layer comprises a first part and a second part, a top surface of the first part is leveled with a top surface of the contact structure, a top surface of the second part is leveled with a top surface of the dielectric layer, and the contact structure is located over the second part of the barrier layer.
Dependencies are inferred from the claim text.