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US 2022/0190122 A1Published application
Multi-layer diffusion barrier and method of making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJyh-nan LIN, Ding-I Liu, Yuh-Ta Fan
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Abstract
A semiconductor device includes a metal layer, an insulating layer disposed above the metal layer, and a multi-layer diffusion barrier disposed on the metal layer between the metal layer and the insulating layer. The multi-layer diffusion barrier includes a first material layer including a metallic nitride and a second material layer including a metallic oxide.
Claims20
A semiconductor device, comprising:
- a metal layer;
- and
- a multi-layer diffusion barrier disposed on top of the metal layer, the multi-layer diffusion barrier comprising:
- a first material layer including a metallic nitride;
- and
- a second material layer including a metallic oxide, wherein the metallic nitride of the first material layer and the metallic oxide of the second material layer each include a same metal.
3 more elements
A semiconductor device, comprising
- a multi-layer diffusion barrier disposed on a metal layer, the multi-layer diffusion barrier comprising:
- a first material layer including a metallic nitride;
- and
- a second material layer including a metallic oxide, wherein the metallic nitride of the first material layer and the metallic oxide of the second material layer each include a same metal;
- an etch-stop layer disposed on the multi-layer diffusion barrier;
- and
- a low-k layer disposed on the etch-stop layer, wherein the low-k layer comprises silicon
4 more elements
A method of forming a semiconductor device, comprising:
- depositing a conductive metal layer;
- forming a diffusion barrier on the conductive metal layer, the diffusion barrier comprising a metallic nitride layer deposited on the conductive metal layer and a metallic oxide layer disposed above the metallic nitride layer, wherein the metallic nitride layer and the metallic oxide layer each include a same metal;
- and
- forming an etch-stop layer on the diffusion barrier.
1 more element
Dependencies are inferred from the claim text.