Transistor channel materials
AssigneeIntel Corporation
InventorsAbhishek A. Sharma, Noriyuki Sato, Van H. Le, Sarah Atanasov, Arnab Sen Gupta, Matthew V. Metz, Hui Jae Yoo
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Abstract
Disclosed herein are transistor channel materials, and related methods and devices. For example, in some embodiments, a transistor may include a channel material including a semiconductor material having a first conductivity type, and the channel material may further include a dopant including (1) an insulating material and/or (2) a material having a second conductivity type opposite to the first conductivity type.
Claims20
A transistor, comprising:
- a gate electrode material;
- a gate dielectric material;
- and
- a channel material, wherein the gate dielectric material is between the channel material and the gate electrode material, the channel material includes a semiconductor material having a first conductivity type, and the channel material further includes a dopant including (1) an insulating material or (2) a material having a second conductivity type opposite to the first conductivity type.
A transistor, comprising:
- a gate electrode material;
- a gate dielectric material;
- and
- a channel material, wherein the gate dielectric material is between the channel material and the gate electrode material, the channel material includes an oxide semiconductor having a first conductivity type, and the channel material further includes a dopant including (1) an insulating material or (2) a material having a second conductivity type opposite to the first conductivity type.
The transistor of claim 29, wherein the dopant includes an insulating material.
A transistor, comprising:
- a gate electrode material;
- a gate dielectric material;
- and
- a channel material, wherein the gate dielectric material is between the channel material and the gate electrode material, the channel material includes a first layer of a first semiconductor material including a first dopant including an insulating material, and the channel material includes a second layer of a second semiconductor material having a first conductivity type, and the second layer further includes a second dopant including a material having a second conductivity type opposite to the first conductivity type.
Dependencies are inferred from the claim text.