Nitride semiconductor, wafer, semiconductor device and method for manufacturing the nitride semiconductor
AssigneeKabushiki Kaisha Toshiba
InventorsToshiki HIKOSAKA, Hajime NAGO, Jumpei TAJIMA, Shinya NUNOUE
Life of this patent
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Abstract
According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0<x1≤1), a second nitride region including Alx2Ga1-x2N (0<x2<1, x2<x1), and a third nitride region. The second nitride region is between the first nitride region and the third nitride region. The third nitride region includes Al, Ga, and N. The third nitride region does not include carbon, alternately a third carbon concentration in the third nitride region is lower than a second carbon concentration in the second nitride region.
Claims20
A nitride semiconductor, comprising:
- a nitride member,
- the nitride member including:
- a first nitride region including Alx1Ga1-x1N (0<x1≤1);
- a second nitride region including Alx2Ga1-x2N (0<x2<1, x2<x1);
- and
- a third nitride region, the second nitride region being between the first nitride region and the third nitride region, the third nitride region including Al, Ga, and N, the third nitride region not including carbon, alternately a third carbon concentration in the third nitride region being lower than a second carbon concentration in the second nitride region.
A method for manufacturing a nitride semiconductor, comprising:
- forming a second nitride region including Alx2Ga1-x2N (0<x2<1, x2<x1) and including carbon on a first nitride region including Alx1Ga1-x1N (0<x1≤);
- and
- forming a third nitride region on the second nitride region,
- the third nitride region including Al, Ga, and N, the third nitride region not including carbon, alternately a third carbon concentration in the third nitride region being lower than a second carbon concentration in the second nitride region.
Dependencies are inferred from the claim text.