Integrated circuit (ic) structure with body contact to well with multiple diode junctions
AssigneeGlobalFoundries U.S. Inc.
InventorsAnupam Dutta, Venkata N.R. Vanukuru, John J. Ellis-Monaghan
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Abstract
The disclosure provides an integrated circuit (IC) structure with a body contact to a well with multiple diode junctions. A first doped well is in a substrate. A transistor is on the first doped well. A trench isolation (TI) is adjacent a portion of the first doped well. A second doped well within the substrate has a bottom surface beneath a bottom surface of the first doped well. A sidewall of the TI horizontally abuts the second doped well. A first diode junction is between the second doped well and the first doped well. A second diode junction is between the second doped well and the substrate. A body contact is on the second doped well.
Claims20
An integrated circuit (IC) structure, comprising:
- a first doped well within a substrate, the first doped well having a first doping type;
- a transistor structure on the first doped well;
- a trench isolation (TI) adjacent a portion of the first doped well;
- and
- a second doped well within the substrate and coupled to a body contact, the second doped well having a second doping type opposite the first doping type, wherein a sidewall of the TI horizontally abuts the second doped well, a vertical boundary between the second doped well and the first doped well defines a first diode junction, and a vertical boundary between the second doped well and the substrate defines a second diode junction.
An integrated circuit (IC) structure, comprising:
- a first doped well within a substrate, the first doped well having a first doping type;
- a transistor structure on the first doped well;
- a trench isolation (TI) adjacent a portion of the first doped well;
- a second doped well within the substrate, the second doped well having a second doping type opposite the first doping type, wherein the second doped well includes:
- a first portion beneath the first doped well, wherein a vertical boundary between the first portion of the second doped well and the first doped well defines a first diode junction, and a vertical boundary between the first portion of the second doped well and the substrate defines a second diode junction, and
- a second portion coupled to a body contact and having a bottom surface substantially coplanar with a bottom surface of the first portion, wherein the second portion includes a sidewall adjacent the first portion of the second doped well and adjacent the TI.
A method of forming an integrated circuit (IC) structure, the method comprising:
- forming a first doped well of a first doping type within a substrate;
- forming a trench isolation (TI) adjacent a sidewall of the first doped well;
- forming a second doped well of a second doping type within the substrate, wherein a vertical boundary between the first portion of the second doped well and the first doped well defines a first diode junction, and a vertical boundary between the first portion of the second doped well and the substrate defines a second diode junction;
- forming a transistor structure on the first doped well;
- and
- forming a body contact to the second portion of the second doped well.
Dependencies are inferred from the claim text.