Semiconductor device and manufacturing method of semiconductor device

A semiconductor device comprising a compound semiconductor layer that includes:

• a drift region of a first conductivity type;
• a junction field-effect transistor (JFET) region of the first conductivity type disposed above the drift region;
• a body region of a second conductivity type disposed above the drift region and adjacent to the JFET region;
• and
• a JFET embedded region of the second conductivity type or i-type disposed in the JFET region, wherein
• the JFET region has a bottom surface portion adjacent to the drift region, a side surface portion adjacent to the body region, and an inside portion adjacent to the JFET embedded region,
• the JFET region further has a high concentration portion at the bottom surface portion and the side surface portion, and
• the high concentration portion has an impurity concentration higher than an impurity concentration of the inside portion.