Semiconductor device

A semiconductor device, comprising:

• a substrate including an active pattern;
• a gate electrode running across the active pattern;
• and
• a source/drain pattern adjacent to one side of the gate electrode and on an upper portion of the active pattern,
• wherein:
• the source/drain pattern includes:
• a body part including a plurality of semiconductor patterns;
• and
• a capping pattern on the body part,
• the body part has a first facet, a second facet, a third facet, a fourth facet, a first corner edge defined where the first facet meets the second facet, a second corner edge defined where the second facet meets the third facet, and a third corner edge defined where the third facet meets the fourth facet,
• the first and third corner edges protrude parallel to the substrate,
• the second corner edge protrudes perpendicular to the substrate,
• the capping pattern covers the second facet, the third facet and the second corner edge between the second and third facets, and
• the capping pattern exposes the first facet, the fourth facet, the first corner edge and the third corner edge.

A semiconductor device, comprising:

• a substrate including a plurality of active fins that are adjacent to each other;
• a gate electrode running across the plurality of active fins;
• a source/drain pattern adjacent to one side of the gate electrode and on the plurality of active fins;
• an active contact electrically connected to the source/drain pattern;
• and
• a silicide layer between the source/drain pattern and the active contact,
• wherein:
• the source/drain pattern includes:
• a body part including a plurality of first semiconductor patterns respectively on the plurality of active fins, a second semiconductor pattern on the plurality of first semiconductor patterns and connecting the plurality of first semiconductor patterns to each other, and a third semiconductor pattern on the second semiconductor pattern;
• and
• a capping pattern on the body part,
• the body part has a first facet, a second facet on the first facet, and a first corner edge defined where the first facet meets the second facet,
• the first corner edge protrudes parallel to the substrate,
• the first facet, the second facet and the first corner edge are adjacent to an outermost one of the plurality of active fins, and
• the capping pattern covers the second facet and exposes the first facet and the first corner edge.