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US 2022/0190111 A1Published application
Semiconductor device and manufacturing method therefor
AssigneeInnoscience (Zhuhai) Technology Co., Ltd.
InventorsKing Yuen WONG, Ronghui HAO, Jinhan ZHANG
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Abstract
The HEMT includes a channel layer, a barrier layer, a drain, and a gate conductor. The barrier layer is disposed on the channel layer. The drain is disposed on the barrier layer. The gate conductor is disposed on the barrier layer. The barrier layer comprises a doped semiconductor region extending from a top surface to a bottom surface of the barrier layer and located between the drain and the gate conductor.
Claims20
A HEMT device, comprising:
- a channel layer;
- a barrier layer disposed on the channel layer;
- a drain disposed on the barrier layer;
- and
- a gate conductor disposed on the barrier layer, wherein the barrier layer comprises a doped semiconductor region extending from a top surface to a bottom surface of the barrier layer and located between the drain and the gate conductor.
2 more elements
A HEMT device, comprising:
- a channel layer comprising a first doped semiconductor region;
- a barrier layer disposed on the channel layer and comprising a second doped semiconductor region in contact with the first doped semiconductor region;
- a drain disposed on the barrier layer;
- and
- a gate conductor disposed on the barrier layer, wherein the first and second doped semiconductor regions are located between the drain and gate conductor.
2 more elements
Dependencies are inferred from the claim text.