Semiconductor device and manufacturing method therefor
AssigneeInnoscience (Zhuhai) Technology Co., Ltd.
InventorsKing Yuen WONG, Ronghui HAO, Jinhan ZHANG
Life of this patent
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Abstract
The HEMT includes a channel layer, a barrier layer, a drain, and a gate conductor. The barrier layer is disposed on the channel layer. The drain is disposed on the barrier layer. The gate conductor is disposed on the barrier layer. The channel layer includes a doped semiconductor structure overlapping with a top surface of the channel layer and having a bottom-most border that is located over a bottom-most surface of the channel layer and is spaced apart from the bottom-most surface of the channel layer. The doped semiconductor structure is located between the drain and the gate conductor.
Claims20
A HEMT device, comprising:
- a channel layer;
- a barrier layer disposed on the channel layer;
- a drain disposed on the barrier layer;
- and
- a gate conductor disposed on the barrier layer, wherein the channel layer comprises a doped semiconductor structure overlapping with a top surface of the channel layer and having a bottom-most border that is located over a bottom-most surface of the channel layer and is spaced apart from the bottom-most surface of the channel layer, wherein the doped semiconductor structure is located between the drain and the gate conductor.
A HEMT device, comprising:
- a channel layer;
- a barrier layer disposed on the channel layer;
- a drain disposed on the barrier layer;
- a gate conductor disposed on the barrier layer;
- and
- a doped semiconductor layer disposed between the barrier layer and the gate conductor, wherein the channel layer comprises a doped semiconductor structure adjacent to the drain and has a doping type opposite a doping type of the doped semiconductor layer.
Dependencies are inferred from the claim text.