Power semiconductor device
AssigneeHyundai Mobis Co., Ltd.
InventorsTae Youp KIM, Hyuk WOO
Life of this patent
Estimating the term…
Abstract
A power semiconductor device includes a substrate, including an active region and edge regions, including a semiconductor layer of a first conductive type including silicon carbide (SiC); an insulating film disposed on the edge regions; a field plate pattern disposed on the insulating film; a first doped region of a second conductive type disposed inside the substrate to extend downward from a top surface of the edge regions; a second doped region of the second conductive type, buried in the edge regions, extends in a direction having a vector component parallel to the top surface of the substrate; and a third doped region of the first conductive type is disposed on the second doped region and at a side portion of the first doped region.
Claims11
A power semiconductor device comprising:
- a substrate, comprising an active region and edge regions, comprising a semiconductor layer of a first conductive type comprising silicon carbide (SiC);
- an insulating film disposed on the edge regions;
- a field plate pattern disposed on the insulating film;
- a first doped region of a second conductive type disposed inside the substrate to extend downward from a top surface of the edge regions;
- a second doped region of the second conductive type, buried in the edge regions, extends in a direction having a vector component parallel to the top surface of the substrate;
- and
- a third doped region of the first conductive type is disposed on the second doped region and at a side portion of the first doped region.
Dependencies are inferred from the claim text.