Capacitor manufacturing method
AssigneeSTMicroelectronics (Tours) SAS
InventorMohamed BOUFNICHEL
Life of this patent
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Abstract
The present description concerns a capacitor manufacturing method, including the successive steps of: a) forming a stack including, in the order from the upper surface of a substrate, a first conductive layer made of aluminum or an aluminum-based alloy, a first electrode, a first dielectric layer, and a second electrode; b) etching, by chemical plasma etching, an upper portion of the stack, said chemical plasma etching being interrupted before the upper surface of the first conductive layer; and c) etching, by physical plasma etching, a lower portion of the stack, said physical plasma etching being interrupted on the upper surface of the first conductive layer.
Claims20
A method, comprising:
- forming a capacitor including:
- forming a stack including:
- forming a first conductive layer includes aluminum or an aluminum-based alloy on the first surface of a substrate;
- forming a first electrode on the first conductive layer;
- forming a first dielectric layer on the first electrode;
- and
- forming a second electrode on the first dielectric layer;
- etching, by chemical plasma etching, a first portion of the stack, the chemical plasma etching being seized before reaching a second surface of the first conductive layer;
- and
- etching, by physical plasma etching, a lower portion of the stack, the physical plasma etching being seized at the second surface of the first conductive layer.
A device, comprising:
- a stacked capacitor structure including:
- a substrate having a surface;
- a first conductive layer on and extending along the surface;
- a first electrode on and extending along the conductive layer;
- a dielectric layer on and extending along the first electrode;
- a second electrode on and extending along the dielectric layer;
- a second conductive layer on and extending along the second electrode;
- and
- a metal pad on and extending from the second conductive layer.
A method, comprising:
- forming a stacked structure including:
- forming a first conductive layer on a first surface of a substrate;
- forming a first electrode on the first conductive layer;
- forming a dielectric layer on the first electrode;
- forming a second electrode on the dielectric layer;
- and
- forming a protection layer covering the second electrode, the dielectric layer, the first electrode, and the first conductive layer;
- forming a sidewall including forming respective side surfaces of the first electrode, the dielectric layer, the second electrode, and the protection layer by removing respective portions of the first electrode, the dielectric layer, the second electrode, the second conductive layer, and the protection layer, respectively.
Dependencies are inferred from the claim text.