Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells

A two-terminal rewriteable non-volatile memory cell comprising:

• a first electrode;
• a first conductive metal oxide layer in contact with the first electrode;
• a second conductive metal oxide layer in contact with the first conductive metal oxide layer;
• an insulating metal oxide layer in contact with the second conductive metal oxide layer;
• and
• a second electrode in contact with the insulating metal oxide layer, wherein:
• the first conductive metal oxide layer and the second conductive metal oxide layer generate negative ions when a voltage is applied between the first electrode and the second electrode;
• the first conductive metal oxide layer and the second conductive metal oxide layer include an obstruction barrier that inhibits transport of positive ions;
• and
• the insulating metal oxide layer is permeable to the negative ions when the voltage is applied.