Memory structures and methods for forming the same
AssigneeWinbond Electronics Corp.
InventorsPo-Yen HSU, Bo-Lun WU, Tse-Mian KUO, Wei-Che CHANG, Shuo-Che CHANG
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Abstract
A memory device includes a substrate, an electrical channel layer, a first electrode, a resistive switching layer, a second electrode, and a conductive structure. The electrical channel layer is disposed on the substrate. The first electrode is disposed on the substrate and extends into the electrical channel layer. The resistive switching layer is disposed between the first electrode and the electrical channel layer. The second electrode is disposed on the electrical channel layer. The conductive structure connects the electrical channel layer and the second electrode.
Claims20
A memory structure, comprising:
- a substrate;
- an electrical channel layer disposed on the substrate;
- a first electrode disposed on the substrate and extending into the electrical channel layer;
- a resistive switching layer disposed between the first electrode and the electrical channel layer;
- a second electrode disposed on the electrical channel layer;
- and
- a conductive structure connecting the electrical channel layer and the second electrode.
A memory structure, comprising:
- a substrate;
- an electrical channel layer disposed on the substrate and extending along a first direction;
- a first electrode disposed on the substrate and extending into the electrical channel layer along a second direction different from the first direction;
- a resistive switching layer disposed between the first electrode and the electrical channel layer;
- a second electrode disposed on the electrical channel layer, wherein the substrate, the electrical channel layer and the second electrode are stacked along the second direction;
- and
- a conductive structure connecting the electrical channel layer and the second electrode and extending along the second direction.
A method of forming a memory structure, comprising:
- forming an electrical channel layer on a substrate;
- forming a first electrode on the substrate and extending into the electrical channel layer;
- forming a resistive switching layer between the first electrode and the electrical channel layer;
- and
- forming a conductive structure on the electrical channel layer and connecting to a second electrode.
Dependencies are inferred from the claim text.