Electrically formed memory array
AssigneeMicron Technology, Inc.
InventorAndrea Redaelli
Life of this patent
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Abstract
The present disclosure includes electrically formed memory arrays, and methods of processing the same. A number of embodiments include a plurality of conductive lines separated from one other by an insulation material, a first plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines, a storage element material formed around each respective one of the first plurality of conductive extensions, a second plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines, and a plurality of single element materials formed around each respective one of the second plurality of conductive extensions.
Claims20
A memory array, comprising:
- a plurality of conductive lines separated from one other by an insulation material;
- a first plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines;
- a storage element material formed around each respective one of the first plurality of conductive extensions;
- a second plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines;
- and
- a plurality of single element materials formed around each respective one of the second plurality of conductive extensions.
A three dimensional memory array, comprising:
- a plurality of conductive lines separated from one another by an insulation material;
- and
- a first plurality of vertical stacks, wherein each respective one of the first plurality of vertical stacks includes:
- a conductive extension arranged to extend substantially perpendicular to the plurality of conductive lines;
- and
- a storage element material formed around the conductive extension a second plurality of vertical stacks, wherein each respective one of the second plurality of vertical stacks includes:
- an inactive conductive extension arranged to extend substantially perpendicular to the plurality of conductive lines;
- and
- a plurality of single element materials formed around the inactive conductive extension.
A method of processing a three dimensional memory array, comprising:
- forming a conductive line material in a plurality of planes separated from one other by an insulation material;
- forming an opening through the conductive line material in the plurality of planes;
- forming a first single element material in the opening;
- forming a second single element material in the opening after forming the first single element material in the opening;
- forming a conductive cylinder in the opening after forming the second single element material in the opening;
- forming a conductive extension in the opening after forming the conductive cylinder in the opening;
- and
- performing an electrical forming process to form a storage element material from the first single element material and the second single element material in the opening.
Dependencies are inferred from the claim text.