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US 2022/0190028 A1Published application
Semiconductor structure and storage circuit
AssigneeChangxin Memory Technologies, Inc.
InventorsEr-Xuan Ping, Xiaoguang Wang, Baolei Wu, Yulei Wu
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Abstract
The present disclosure provides a semiconductor structure and a storage circuit that implements the storage structure of a magnetoresistive random access memory (MRAM) based on a dynamic random access memory (DRAM) fabrication platform.
Claims20
A semiconductor structure, comprising:
- multiple first active regions that are separate from one another and located in a substrate;
- connection pads, each connection pad connecting ends of adjacent first active regions;
- and
- magnetic tunnel junctions, each magnetic tunnel junction being connected with a respective connection pad.
1 more element
A storage circuit, comprising:
- a bit line and a word line;
- a first transistor and a second transistor, the first transistor and the second transistor being connected with the word line respectively;
- a magnetic tunnel junction, one end of the magnetic tunnel junction being connected with the bit line, and another end of the magnetic tunnel junction being connected with one end of the first transistor and one end of the second transistor, respectively;
- and
- a first selection line and a second selection line, the first selection line and the second selection line being connected with another end of the first transistor and another end of the second transistor, respectively.
2 more elements
Dependencies are inferred from the claim text.