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US 2022/0190016 A1Published application
Color and infrared image sensor
AssigneeIsorg
InventorsCamille DUPOIRON, Benjamin BOUTHINON
Life of this patent
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AssigneeIsorg
InventorsCamille DUPOIRON, Benjamin BOUTHINON
Estimating the term…
A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.
(canceled)
The image sensor according to claim 16, further comprising an infrared filter covering said stack, the first and second photosensitive layers being interposed between the substrate and the infrared filter, the infrared filter being configured to give way to the electromagnetic waves of the visible spectrum, to give way to the electromagnetic waves of said first portion of the infrared spectrum, and to block the electromagnetic waves of at least a second portion of the infrared spectrum between the visible spectrum and the first portion of the infrared spectrum.
The image sensor according to claim 16, comprising an array of lenses covering said stack.
(canceled)
The image sensor according to claim 16, wherein, for each pixel of the color image to be acquired, the fourth electrode is common to the first, second, and third sub-pixels.
The image sensor according to claim 16, wherein, for each pixel of the infrared image to be acquired, the second electrode is common to the first, second, and third sub-pixels.
The image sensor according to claim 16, wherein, for each pixel of the infrared image to be acquired, the first electrode is common to the first, second, and third sub-pixels.
The image sensor according to claim 16, comprising, for each pixel of the color image to be acquired, at least one fourth sub-pixel comprising one of the second photodiodes and one of the color filters, the color filter of the fourth sub-pixel being configured to block the electromagnetic waves of the visible spectrum and to give way to electromagnetic waves in a third portion of the infrared spectrum between the visible spectrum and the first portion of the infrared spectrum, the second photosensitive layer being configured to absorb electromagnetic waves in said third portion of the infrared spectrum.
The image sensor according to claim 16, comprising, for each first, second, and third sub-pixels, a readout circuit coupled to the second photodiode and to the first photodiode.
The image sensor according to claim 16, wherein the first photosensitive layer and/or the second photosensitive layer is made of organic materials and/or contains quantum dots.
The image sensor according to claim 16, wherein the resolution of the color images is different from the resolution of the infrared images.
A color and infrared image sensor comprising:
Dependencies are inferred from the claim text.