Photoelectric conversion apparatus having avalanche photodiodes, photoelectric conversion system, and moving body
AssigneeCanon Kabushiki Kaisha
InventorKazuo Yamazaki
Life of this patent
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Abstract
A photoelectric conversion apparatus includes a plurality of pixels each including a first avalanche photodiode and a second avalanche photodiode having a light-receiving surface area size different from a light-receiving surface area size of the first avalanche photodiode. The first avalanche photodiode is connected between a first waveform shaping circuit and a first switch. The second avalanche photodiode is connected between a second waveform shaping circuit and a second switch. An inverter circuit is connected between a control node of the first switch and a control node of the second switch.
Claims19
A photoelectric conversion apparatus comprising:
- a plurality of pixels each including a first avalanche photodiode and a second avalanche photodiode having a light-receiving surface area size different from a light-receiving surface area size of the first avalanche photodiode,
- wherein the first avalanche photodiode is connected between a first waveform shaping circuit and a first switch, and the second avalanche photodiode is connected between a second waveform shaping circuit and a second switch, and
- wherein an inverter circuit is connected between a control node of the first switch and a control node of the second switch.
A photoelectric conversion apparatus including a plurality of pixels each including a first avalanche photodiode and a second avalanche photodiode having a light-receiving surface area size different from a light receiving surface area size of the first avalanche photodiode, the apparatus comprising:
- a control circuit configured to not apply, in a case where either one of the first avalanche photodiode and the second avalanche photodiode is applied with a reverse bias voltage equal to or higher than a breakdown voltage, the reverse bias voltage equal to or higher than the breakdown voltage to the other one of the first avalanche photodiode and the second avalanche photodiode,
- wherein, in some pixels of the plurality of pixels, the first avalanche photodiode is applied with the reverse bias voltage equal to or higher than the breakdown voltage, and
- wherein, in other some pixels of the plurality of pixels, the second avalanche photodiode is applied with the reverse bias voltage equal to or higher than the breakdown voltage.
Dependencies are inferred from the claim text.