Semiconductor device

A semiconductor device comprising:

• a first circuit connected between a first power supply line and a ground line;
• a second circuit connected between a second power supply line and the ground line;
• a third circuit connected between the second power supply line and the ground line,
• wherein the second circuit receives an input signal from the first circuit, converts the input signal, and outputs the converted input signal to the third circuit,
• wherein the second circuit includes a logic circuit and a switch element,
• wherein the logic circuit and the switch element are connected between the second logic circuit and a second ground line, wherein the logic circuit comprises a first transistor of a first conductive type;
• and
• wherein the switch element comprises a second transistor of the first conductive type,
• wherein the first transistor includes:
• a support substrate;
• a first semiconductor layer arranged on the support substrate via a first insulating layer;
• a first source region of the first conductive type, a first drain region of the first conductive type, and a first channel formation region formed within the first semiconductor layer;
• and a first gate electrode arranged on the first channel formation region through a first gate insulating film,
• the second transistor includes:
• the support substrate;
• a second semiconductor layer arranged on the support substrate via a second insulating layer;
• a second source region of the first conductive type, a second drain region of the first conductive type, and a second channel formation region formed within the second semiconductor layer;
• and
• a second gate electrode arranged on the second channel formation region via a second gate insulating film, and
• wherein an impurity concentration of the second channel formation region is higher than an impurity concentration of the first channel formation region.