Multi-function substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsEugene I-Chun Chen, Kuan-Liang Liu, Szu-Yu Wang, Chia-Shiung Tsai, Ru-Liang Lee, Chih-Ping Chao, Alexander Kalnitsky
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Abstract
The present disclosure relates an integrated chip. The integrated chip includes a polysilicon layer arranged on an upper surface of a base substrate. A dielectric layer is arranged over the polysilicon layer, and an active semiconductor layer is arranged over the dielectric layer. A semiconductor material is arranged vertically on the upper surface of the base substrate and laterally beside the active semiconductor layer.
Claims21
1-16. (canceled)
A method of forming an integrated chip, comprising:
- forming a stacked semiconductor structure having a polysilicon layer disposed onto a base substrate and separated from an active semiconductor layer by a dielectric layer;
- performing one or more etching processes to remove first parts of the active semiconductor layer and the dielectric layer within a second region and expose a surface of the base substrate, wherein second parts of the active semiconductor layer and the dielectric layer remain within a first region after the one or more etching processes are completed;
- and
- forming a semiconductor material onto the surface of the base substrate.
A method of forming an integrated chip, comprising:
- forming a first dielectric layer onto a polysilicon layer formed on a first substrate;
- forming a second dielectric layer onto an active semiconductor layer formed on a second substrate;
- bonding the first dielectric layer to the second dielectric layer to form a dielectric structure that separates the active semiconductor layer from the first substrate;
- removing the second substrate to expose the active semiconductor layer;
- removing parts of the active semiconductor layer, the dielectric structure, and the polysilicon layer to expose a surface of the first substrate;
- and
- forming a semiconductor material onto the surface of the first substrate, wherein the semiconductor material extends along sidewalls of the active semiconductor layer, the dielectric structure, and the polysilicon layer.
A method of forming an integrated chip, comprising:
- forming an epitaxial layer onto a base substrate;
- forming a dielectric structure over the epitaxial layer, wherein the dielectric structure separates the epitaxial layer from an active semiconductor layer;
- selectively patterning the active semiconductor layer and the dielectric structure to form sidewalls of the active semiconductor layer and the dielectric structure;
- and
- forming a semiconductor material over the base substrate and along the sidewalls of the active semiconductor layer and the dielectric structure.
Dependencies are inferred from the claim text.