Rf substrate structure and method of production
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsEmmanuel Augendre, Shay Reboh, Pablo Acosta Alba, Thomas Lorne, Emmanuel Rolland
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Abstract
Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.
Claims15
A structure provided with a substrate comprising a surface layer on or above which at least one component, in particular an RF circuit component, is formed or is to be formed, said surface layer being disposed on, and in contact with, an insulating layer, said insulating layer being disposed on, and in contact with, a pedestal, said pedestal comprising:
- a support layer of a given semiconductor material,
- a trap-rich layer comprising a layer of polycrystalline semiconductor material located between said insulating layer and said support layer, said pedestal further comprising, between said support layer and said insulating layer:
- a porous layer provided with a lower face in contact with said support layer, said porous layer being formed by a solid skeleton and a distribution of empty and/or gas-filled closed pores.
Dependencies are inferred from the claim text.