Semiconductor device

A semiconductor device, comprising:

• a stacked film including a plurality of electrode layers alternating with a plurality of insulating layers;
• a channel layer formed in a hole extending through the stacked film;
• a charge storage layer formed between the channel semiconductor layer and the stacked film;
• a first insulating film formed on the charge storage layer between the stacked film and charge storage layer;
• a second insulating film formed on the channel layer between the charge storage insulating film and the channel layer;
• a third insulating film between each electrode layer and adjacent insulating layers and between each electrode layer and the first insulating film;
• and
• an adsorption promoting layer formed at the surfaces of the third insulating film facing each electrode layer, wherein
• the third insulating film comprises a first metal element and a first element,
• the adsorption promoting layer comprises a second element and a third element,
• each electrode layer comprises a second metal element,
• each electrode layer includes a first electrode layer and a second electrode layer,
• the first electrode layer of each electrode layer is between the second electrode layer of the electrode layer and the third insulating layer, and
• the third element is boron, carbon, nitrogen, gallium, germanium, or arsenic.

A semiconductor device, comprising:

• a stacked film including a plurality of electrode layers alternating with a plurality of insulating layers;
• a channel layer formed in a hole extending through the stacked film;
• a charge storage layer formed between the channel semiconductor layer and the stacked film;
• a first insulating film formed on the charge storage layer between the stacked film and charge storage layer;
• a second insulating film formed on the channel layer between the charge storage insulating film and the channel layer;
• a third insulating film between each electrode layer and adjacent insulating layers and between each electrode layer and the first insulating film;
• and
• an adsorption promoting layer formed at the surfaces of the third insulating film facing each electrode layer, wherein
• the third insulating film comprises a first metal element and a first element,
• the adsorption promoting layer comprises a second element, a third element, and fourth element,
• each electrode layer comprises a second metal element and a second electrode layer,
• the first electrode layer of each electrode layer is between the second electrode layer of the electrode layer and the third insulating layer, and
• the fourth element that is a noble gas element.