Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorKi Hong LEE
Life of this patent
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Abstract
A semiconductor device, and a method of manufacturing the semiconductor device, includes a first source layer, a second source layer, a first insulating passivation layer partially interposed between the first source layer and the second source layer, and a gate structure located on the second source layer. The semiconductor device also includes a source contact structure passing through the gate structure, the second source layer, and the first insulating passivation layer. The source contact structure is coupled to the first source layer.
Claims39
A semiconductor device, comprising:
- a first source layer;
- a second source layer;
- a first insulating passivation layer partially interposed between the first source layer and the second source layer;
- a gate structure located on the second source layer;
- and
- a source contact structure passing through the gate structure, the second source layer, and the first insulating passivation layer, and electrically coupled to the first source layer.
A semiconductor device, comprising:
- a source structure;
- a gate structure;
- an interlayer insulating layer interposed between the source structure and the gate structure;
- and
- a source contact structure passing through the gate structure and the interlayer insulating layer, and electrically coupled to the source structure, wherein the source contact structure comprises:
- a first portion passing through the gate structure;
- a second portion passing through the interlayer insulating layer;
- and
- a third portion passing through the source structure, wherein:
- the third portion is wider than the first portion, and
- the third portion includes a void.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first source layer;
- forming a first insulating passivation layer on the first source layer;
- forming a sacrificial structure on the first insulating passivation layer;
- forming a stack on the sacrificial structure, the stack including first material layers and second material layers which are alternately stacked;
- forming a first opening passing through the stack;
- forming a second opening coupled to the first opening by removing the sacrificial structure;
- forming a third opening passing through the first insulating passivation layer and exposing the first source layer;
- forming a second source layer in the second opening and the third opening;
- and
- replacing the first material layers with third material layers through the first opening.
Dependencies are inferred from the claim text.