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US 2022/0189980 A1Published application
Semiconductor device and manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorNam Jae LEE
Life of this patent
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Abstract
A semiconductor device includes: conductive layers and interlayer insulating layers, which are alternately stacked; a select conductor spaced apart from the conductive layers; cell plugs penetrating the conductive layers, the interlayer insulating layers, and the select conductor; and an auxiliary conductor in contact with the select conductor.
Claims45
A semiconductor device comprising:
- conductive layers and interlayer insulating layers, which are alternately stacked;
- a select conductor spaced apart from the conductive layers;
- outer cell plugs penetrating the conductive layers, the interlayer insulating layers, and the select conductor;
- and
- an outer auxiliary conductor surrounding the outer cell plugs, the outer auxiliary conductor being in contact with the select conductor,
- wherein the outer auxiliary conductor includes round parts and connection parts,
- wherein the round parts respectively surround the outer cell plugs, and
- wherein the connection parts connect the round parts adjacent to each other.
5 more elements
A semiconductor device comprising:
- conductive layers and interlayer insulating layers, which are alternately stacked;
- a select conductor spaced apart from the conductive layers;
- inner cell plugs penetrating the conductive layers, the interlayer insulating layers, and the select conductor;
- and
- inner auxiliary conductors in contact with the select conductor, and
- wherein the inner auxiliary conductors respectively surround the inner cell plugs, and
- wherein the inner auxiliary conductors are disposed at a level higher than that of the select conductor.
4 more elements
A semiconductor device comprising:
- conductive layers and interlayer insulating layers, which are alternately stacked;
- a select conductor spaced part from the conductive layers;
- and
- cell plugs penetrating the conductive layers, the interlayer insulating layers, and the select conductor,
- wherein the select conductor includes a select base part surrounding the cell plugs and select protrusion parts protruding in a length direction of the cell plugs from the select base part.
2 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a select conductive layer on a substrate;
- forming a stack structure on the select conductive layer;
- forming cell plugs penetrating the select conductive layer and the stack structure;
- exposing the cell plugs and the select conductive layer by removing the substrate:
- isolating the select conductive layer into select conductors;
- forming an auxiliary conductive layer covering the select conductors;
- and
- etching the auxiliary conductive layer.
5 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming an interlayer sacrificial layer on a substrate;
- forming a select sacrificial layer on the interlayer sacrificial layer;
- forming a preliminary stack structure on the select sacrificial layer;
- forming cell plugs penetrating the preliminary stack structure, the select sacrificial layer, and the interlayer sacrificial layer;
- removing the select sacrificial layer;
- forming a select conductive layer in a region in which the select sacrificial layer is removed;
- exposing the cell plugs and the select conductive layer by removing the substrate and the interlayer sacrificial layer;
- forming a select conductor surrounding the cell plugs by etching the select conductive layer;
- forming an auxiliary conductive layer in contact with the select conductor;
- and
- etching the auxiliary conductive layer.
8 more elements
Dependencies are inferred from the claim text.