Semiconductor device and method of manufacturing semiconductor device

A semiconductor device comprising:

• a first conductive bonding pattern and a second conductive bonding pattern bonded to each other and extending toward opposite directions;
• a first etch stop layer penetrated by an end of the first conductive bonding pattern;
• a second etch stop layer penetrated by an end of the second conductive bonding pattern;
• a first dielectric layer disposed between the first etch stop layer and the second etch stop layer and having a first sidewall facing the first conductive bonding pattern;
• a second dielectric layer disposed between the first conductive bonding pattern and the first sidewall of the first dielectric layer and extending between the first dielectric layer and the second etch stop layer;
• a third dielectric layer disposed between the second dielectric layer and the second etch stop layer and having a second sidewall facing the second conductive bonding pattern;
• and
• a fourth dielectric layer disposed between the second conductive bonding pattern and the second sidewall of the third dielectric layer, extending between the third dielectric layer and the second dielectric layer, and bonded to the second dielectric layer.

A method of manufacturing a semiconductor device, the method comprising:

• forming a conductive pattern;
• forming an etch stop layer on the conductive pattern;
• forming a first dielectric layer on the etch stop layer;
• forming an opening passing through a portion of the first dielectric layer overlapping the conductive pattern, and exposing a portion of the etch stop layer;
• forming a second dielectric layer extending along a surface of the opening and an upper surface of the first dielectric layer, and having a groove overlapping the opening and the conductive pattern;
• forming a contact hole exposing the conductive pattern, by etching a portion of each of the second dielectric layer and the etch stop layer;
• and
• filling the opening and the contact hole with a conductive bonding pattern.