One-transistor (1t) one-time programmable (otp) anti-fuse bitcell with reduced threshold voltage
AssigneeSynopsys, Inc.
InventorAndrew Edward HORCH
Life of this patent
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Abstract
A one-transistor (1T) one-time programmable (OTP) anti-fuse bitcell is provided. The 1T OTP anti-fuse bitcell includes a gate, a diffusion region including at least two sub-regions, and a gate oxide region located between the gate and the diffusion region, the gate oxide region including a thin gate oxide region and a thick gate oxide region.
Claims20
A one-transistor (1T) one-time programmable (OTP) anti-fuse bitcell comprising:
- a gate;
- a diffusion region including at least two sub-regions, the at least two sub-regions being isolated from one another at one or more locations;
- and
- a gate oxide region located between the gate and the diffusion region, the gate oxide region including a first gate oxide region and a second gate oxide region, wherein the first gate oxide region has a thinner thickness than the second gate oxide region.
A bipolar complementary metal-oxide-semiconductor double-diffused metal-oxide-semiconductor (BCD) chip comprising:
- a row of one-transistor (1T) one-time programmable (OTP) anti-fuse bitcells, each pair of 1T OTP anti-fuse bitcells of the row sharing a common bitline, and each 1T OTP anti-fuse bitcell of the row comprising:
- a gate;
- a diffusion region including at least two sub-regions, the at least two sub-regions being isolated from one another at one or more locations;
- and
- a gate oxide region located between the gate and the diffusion region, the gate oxide region including a thin gate oxide region and a thick gate oxide region.
A method of manufacturing a one-transistor (1T) one-time programmable (OTP) anti-fuse bitcell, the method comprising:
- forming a diffusion region including at least two sub-regions, the at least two sub-regions being isolated from one another at one or more locations;
- forming a gate oxide region over the diffusion region, the gate oxide region including a thin gate oxide region and a thick gate oxide region;
- and
- forming a gate over the gate oxide region.
Dependencies are inferred from the claim text.