Semiconductor memory device and method for fabricating the same

A semiconductor memory device comprising:

• a substrate comprising a cell region, wherein the cell region comprises a first region and a second region along a boundary of the first region;
• a plurality of support patterns on the first region of the cell region and spaced apart from each other;
• a dummy support pattern extending along the second region of the cell region;
• a plurality of lower electrodes on the first region of the cell region, wherein respective subsets of the lower electrodes are connected by each of the support patterns;
• and
• a plurality of dummy lower electrodes on the second region of the cell region of the substrate and connected by the dummy support pattern,
• wherein the support patterns are arranged in a honey-comb structure.

A semiconductor memory device comprising:

• a substrate;
• a plurality of lower electrodes on the substrate;
• and
• a plurality of support patterns connected to the lower electrodes,
• wherein the plurality of lower electrodes comprises a first lower electrode line and a second lower electrode line extending in a first direction,
• wherein each of the first and second lower electrode lines are adjacent to each other in a second direction different from the first direction,
• wherein one of the lower electrodes of the second lower electrode line is offset in the second direction with respect to one of the lower electrodes of the first lower electrode line, and
• wherein the plurality of support patterns comprises a first support pattern line extending in a third direction different from the first direction and the second direction.