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US 2022/0189960 A1Published application
Apparatuses and methods for controlling structure of bottom electrodes and providing a top-support thereof
AssigneeMicron Technology, Inc.
InventorsAkira Kaneko, Keisuke Otsuka
Life of this patent
Estimating the term…
Abstract
An apparatus includes: a substrate; a plurality of pillar-shaped bottom electrodes provided over the substrate; and an upper electrode covering side and top surfaces of the pillar-shaped bottom electrodes with an intervening capacitor insulating film therebetween; wherein the pillar-shaped bottom electrodes have at least an upper portion and a lower portion, and the diameter of the upper portion is smaller than the diameter of the lower portion.
Claims19
An apparatus comprising:
- a substrate;
- a plurality of pillar-shaped bottom electrodes provided over the substrate;
- and
- an upper electrode covering side and top surfaces of the pillar-shaped bottom electrodes with an intervening capacitor insulating film therebetween;
- wherein the pillar-shaped bottom electrodes have at least an upper portion and a lower portion, and the diameter of the upper portion is smaller the diameter of the lower portion.
2 more elements
A method comprising:
- forming a first insulating film over a substrate;
- forming a plurality of first holes penetrating the first insulating film;
- filling each of the plurality of first holes with a conductive material to form a plurality of pillar-shaped bottom electrodes;
- removing a top part of the first insulating film to expose one or more of upper portions of the plurality of pillar-shaped bottom electrodes;
- partially etching the exposed upper portions of the plurality of pillar-shaped bottom electrodes to have a wider distance between the exposed upper portions of the pillar-shaped bottom electrodes adjacently arranged;
- removing the first insulating film to expose lower portions of the plurality of pillar-shaped bottom electrodes;
- and
- forming upper electrodes to cover the exposed lower and upper portions of the plurality of pillar-shaped bottom electrodes with intervening capacitor insulating films therebetween.
5 more elements
A method comprising;
- forming a first insulating film over a substrate;
- forming a second insulating film on the first insulating film;
- forming a third insulating film on the second insulating film, the third insulating film having a plurality of openings;
- forming a fourth insulating film on the third insulating film;
- forming a fifth insulating film on the fourth insulating film;
- forming a plurality of first holes reaching from the upper surface of the fifth insulating film to a bottom surface of the first insulating film;
- filling each of the plurality of first holes with a conductive material to form a plurality of pillar-shaped bottom electrodes;
- removing the fifth insulating film to expose upper portions of the plurality of pillar-shaped bottom electrodes;
- partially etching the exposed upper portions of the plurality of pillar-shaped bottom electrodes to have a wider distance between the exposed upper portion of the pillar-shaped bottom electrodes adjacently arranged;
- and
- forming upper electrodes to cover the exposed lower and upper portions of the plurality of pillar-shaped bottom electrodes with intervening capacitor insulating films therebetween.
8 more elements
Dependencies are inferred from the claim text.