Method for manufacturing semiconductor die with decoupling capacitor

Abstract

The present application provides a method for manufacturing a semiconductor die. The method includes forming dielectric layers on a substrate; forming decoupling capacitors in the dielectric layers; forming first and second bonding pads on the dielectric layers, wherein the first bonding pads are coupled to a power supply voltage, the second bonding pads are coupled to a reference voltage, a group of the decoupling capacitors are located under one of the first bonding pads, first terminals of the group of the decoupling capacitors are electrically connected to the one of the first bonding pads, second terminals of the group of the decoupling capacitors are routed to one of the second bonding pads; and forming bond metals on the first and second bonding pads, wherein the decoupling capacitors are overlapped with the first and second bonding pads, and laterally surround portions of the dielectric layers overlapped with the bond metals.

Dependencies are inferred from the claim text.