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US 2022/0189958 A1Published application
Semiconductor device and method of manufacturing the semiconductor device
AssigneeSK hynix Inc.
InventorKang Sik CHOI
Life of this patent
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Abstract
Provided herein may be a semiconductor device. The semiconductor device may include a first stacked body including a first stacked insulating layer and a first stacked conductive layer that are alternately stacked; a capacitor plug passing through the second stacked body; and a capacitor multi-layered layer configured to enclose the capacitor plug. The capacitor plug may include metal.
Claims37
A semiconductor device, comprising:
- a first stacked body including a first stacked insulating layer and a first stacked conductive layer that are alternately stacked;
- a capacitor plug passing through the first stacked body;
- and
- a capacitor multi-layered layer configured to enclose the capacitor plug,
- wherein the capacitor plug includes metal.
2 more elements
A semiconductor device, comprising:
- a first stacked body including a first stacked insulating layer and a first stacked conductive layer that are alternately stacked;
- a capacitor plug passing through the first stacked body;
- a capacitor insulating layer configured to enclose the capacitor plug;
- and
- a capacitor multi-layered layer configured to enclose the capacitor insulating layer.
2 more elements
A semiconductor device, comprising:
- a first stacked body including a first stacked insulting layer and a first stacked conductive layer that are alternately stacked;
- first capacitor plugs passing through the first stacked body;
- first capacitor multi-layered layers configured to enclose the respective first capacitor plugs;
- second capacitor plugs passing through the first stacked body;
- second capacitor multi-layered layers configured to enclose the respective second capacitor plugs;
- a first electrode coupled to the first capacitor plugs;
- and
- a second electrode coupled to the second capacitor plugs,
- wherein the first electrode and the second electrode are electrically separated from each other.
6 more elements
A method of manufacturing a semiconductor device, comprising:
- forming a preliminary stacked body by alternately stacking preliminary stacked insulating layers and preliminary stacked sacrificial layers;
- forming a first through hole and a second through hole, each passing through the preliminary stacked body;
- forming a first material layer on a surface of the first through hole and a surface of the second through hole;
- forming a second material layer on the first material layer;
- separating the first material layer into a memory layer in the first through hole and a capacitor multi-layered layer in the second through hole;
- separating the second material layer into a channel layer in the first through hole and a preliminary capacitor insulating layer in the second through hole;
- and
- oxidizing the preliminary capacitor insulating layer, thereby forming a capacitor insulating layer.
5 more elements
Dependencies are inferred from the claim text.