Semiconductor device and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsJunpei MOMO, Kazutaka KURIKI, Hiromichi GODO
Life of this patent
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Abstract
A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.
Claims3
A semiconductor device comprising:
- a first circuit comprising a first transistor;
- a first insulating film over the first transistor;
- a capacitor over the first insulating film;
- a second insulating film over the capacitor;
- and
- a second circuit comprising a second transistor over the second insulating film,
- wherein the second transistor comprises a semiconductor comprising a channel formation region,
- wherein the semiconductor comprises a first opening and a second opening,
- wherein a first connection electrode penetrates the semiconductor through the first opening,
- wherein a second connection electrode penetrates the semiconductor through the second opening, and
- wherein the first circuit and the second circuit are electrically connected by the first connection electrode.
A semiconductor device comprising:
- a first circuit comprising a first transistor;
- a first insulating film over the first transistor;
- a capacitor over the first insulating film;
- a second insulating film over the capacitor;
- and
- a second circuit comprising a second transistor over the second insulating film,
- wherein the second transistor comprises a semiconductor comprising a channel formation region,
- wherein the semiconductor comprises a first opening and a second opening,
- wherein a first connection electrode penetrates the semiconductor through the first opening,
- wherein a second connection electrode penetrates the semiconductor through the second opening, and
- wherein the capacitor and the second circuit are electrically connected by the second connection electrode.
A semiconductor device comprising:
- a first circuit comprising a first transistor;
- a first insulating film over the first transistor;
- a capacitor over the first insulating film;
- a second insulating film over the capacitor;
- and
- a second circuit comprising a second transistor over the second insulating film,
- wherein the second transistor comprises a semiconductor comprising a channel formation region,
- wherein the semiconductor comprises a first opening and a second opening,
- wherein a first connection electrode penetrates the semiconductor through the first opening,
- wherein a second connection electrode penetrates the semiconductor through the second opening,
- wherein the first circuit and the second circuit are electrically connected by the first connection electrode, and
- wherein the capacitor and the second circuit are electrically connected by the second connection electrode.
Dependencies are inferred from the claim text.