Semiconductor device and operation circuit

A semiconductor device, comprising:

• a substrate;
• a seed layer disposed on the substrate;
• a buffer layer disposed on the seed layer;
• a channel layer disposed on the buffer layer;
• a barrier layer disposed on the channel layer;
• a gate structure disposed on the barrier layer and comprising a first edge and a second edge;
• a first source/drain structure disposed on a side of the gate structure;
• a dielectric layer covering the first source/drain structure and the gate structure;
• and
• a first contact penetrating through the dielectric layer, contacting the first source/drain structure, and comprising a third edge and a fourth edge;
• wherein the first edge, the second edge, the third edge, and the fourth edge are arranged in parallel, and the second edge and the third edge are arranged between the first edge and the fourth edge, and
• wherein a first distance between the second edge and the third edge is between 0.5 micrometers and 30 micrometers.