Semiconductor device with sidewall interconnection structure, method of manufacturing the same, and electronic apparatus

A method of manufacturing a semiconductor device, comprising:

• providing an element stack on a carrier substrate;
• forming an interconnection structure connecting the element stack laterally in an area on the carrier substrate adjacent to the element stack, wherein the interconnection structure comprises an electrical isolation layer and a conductive structure in the electrical isolation layer,
• wherein the method further comprises controlling a height of the conductive structure in the interconnection structure, so that at least a part of components to be electrically connected in the element stack are in contact and therefore electrically connected to the conductive structure in the interconnection structure at a corresponding height,
• wherein forming the conductive structure comprises:
• forming a conductive material layer in the area;
• forming a mask layer covering the conductive material layer;
• patterning the mask layer into a pattern corresponding to the conductive structure;
• and
• using the mask layer as an etching mask to selectively etch the conductive material layer.