US 2022/0189925 A1 · SEMICONDUCTOR DEVICE WITH SIDEWALL INTERCONNECTION STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

Abstract

A semiconductor device, a method of manufacturing the semiconductor device, and an electronic apparatus including the semiconductor device are provided. The semiconductor device may include: a plurality of element stacks, wherein each element stack includes a plurality of stacked layers of semiconductor elements, each semiconductor element includes a gate electrode and source/drain regions on opposite sides of the gate electrode; and an interconnection structure between the plurality of element stacks. The interconnection structure includes an electrical isolation layer, and a conductive structure in the electrical isolation layer. At least one of the gate electrode and the source/drain regions of each of at least a part of the semiconductor elements is in contact with and therefore electrically connected to the conductive structure of the interconnection structure at a corresponding height in a lateral direction.

Claims29

Dependent claims

A semiconductor device, comprising:

a plurality of element stacks, wherein each element stack comprises a plurality of stacked layers of semiconductor elements, each semiconductor element comprises a gate electrode and source/drain regions on opposite sides of the gate electrode;
and
an interconnection structure between the plurality of element stacks,
wherein the interconnection structure comprises:
an electrical isolation layer;
and
a conductive structure in the electrical isolation layer,
wherein at least one of the gate electrode and the source/drain regions of each of at least a part of the semiconductor elements is in contact with and therefore electrically connected to the conductive structure of the interconnection structure at a corresponding height in a lateral direction.

5 more elements

A method of manufacturing a semiconductor device, comprising:

stacking a plurality of element layers on a substrate, wherein each element layer comprises a plurality of semiconductor elements in the element layer, each semiconductor element comprises a gate electrode and source/drain regions on opposite sides of the gate electrode;
forming an opening penetrating the plurality of element layers;
forming an interconnection structure in the opening, wherein the interconnection structure comprises an electrical isolation layer and a conductive structure in the electrical isolation layer,
wherein the method further comprises:
controlling a height of the conductive structure of the interconnection structure, so that at least one of the gate electrode and the source/drain regions of each of at least a part of the semiconductor elements is in contact with and therefore electrically connected to the conductive structure of the interconnection structure at a corresponding height in a lateral direction.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device with sidewall interconnection structure, method of manufacturing the same, and electronic apparatus

Life of this patent

Semiconductor device with sidewall interconnection structure, method of manufacturing the same, and electronic apparatus

Life of this patent

Abstract

Claims29