Through-silicon transmission lines and other structures enabled by same

An integrated circuit (IC) die comprising:

• a hot through-substrate-via (TSVs) extending through the IC die between first and second opposing sides thereof;
• a plurality of ground vias extending through the IC die between the first and second sides of the IC die, wherein the plurality of ground vias surround the TSV and are arranged in a circular shape;
• a first die-to-die (DTD) interconnect element electrically connected to hot TSV and disposed on the second side of the IC die, the first DTD interconnect element for connection to a corresponding second DTD interconnect element of a second IC die to form a signal die-to-die (DTD) interconnect between the first die and the second die;
• and
• a plurality of third die-to-die (DTD) interconnect elements electrically connected to the ground vias and disposed on the second side of the IC die, the third DTD interconnect elements for connection to corresponding fourth DTD interconnect elements of the second IC die to form ground die-to-die (DTD) interconnects between the first die and the second die.

An integrated circuit (IC) die comprising:

• a pair of hot through-substrate-via (TSVs) extending through the IC die between first and second opposing sides thereof;
• a plurality of ground vias extending through the IC die between the first and second sides of the IC die, wherein the plurality of ground vias surround the pair of hot TSVs;
• and
• a pair of first die-to-die (DTD) interconnect elements electrically connected to the pair of hot TSVs and disposed on the second side of the IC die, the pair of first DTD interconnect elements for connection to corresponding second DTD interconnect elements of a second IC die to form signal die-to-die (DTD) interconnects between the first die and the second die.