Semiconductor device and method of manufacturing semiconductor device
AssigneeFujitsu Limited
InventorMasaru Morita
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate configured to include a first electrode layer, and a first barrier layer provided on the first electrode layer and bonded to a metal layer, and a circuit substrate configured to include a second electrode layer, and a second barrier layer provided on the second electrode layer and bonded to the metal layer, wherein the semiconductor substrate including a semiconductor element, and the circuit substrate are bonded via the metal layer containing Sn, a linear expansion coefficient of the first barrier layer is larger than that of the circuit substrate, and a linear expansion coefficient of the second barrier layer is smaller than that of the circuit substrate.
Claims16
A semiconductor device comprising:
- a semiconductor substrate configured to include a first electrode layer, and a first barrier layer provided on the first electrode layer and bonded to a metal layer;
- and
- a circuit substrate configured to include a second electrode layer, and a second barrier layer provided on the second electrode layer and bonded to the metal layer;
- wherein the semiconductor substrate including a semiconductor element, and the circuit substrate are bonded via the metal layer containing Sn,
- a linear expansion coefficient of the first barrier layer is larger than that of the circuit substrate, and
- a linear expansion coefficient of the second barrier layer is smaller than that of the circuit substrate.
A method of manufacturing a semiconductor device in which a semiconductor substrate including a semiconductor element, and a circuit substrate are bonded via a metal layer containing Sn, the method comprising:
- forming a first electrode layer on the semiconductor substrate;
- forming a first barrier layer on the first electrode layer, the first electrode layer having a linear expansion coefficient larger than that of the circuit substrate;
- forming a second electrode layer on the circuit substrate;
- forming a second barrier layer on the second electrode layer, the second barrier layer having a linear expansion coefficient smaller than that of the circuit substrate;
- and
- bonding the first barrier layer and the second barrier layer via the metal layer.
Dependencies are inferred from the claim text.