Three-dimensional memory device and manufacturing method thereof

Abstract

A three-dimensional memory device includes a plurality of electrode stacks stacked on a substrate in a vertical direction, each of the plurality of electrode stacks including a plurality of interlayer dielectric layers alternately stacked in the vertical direction with a plurality of electrode layers; and a plurality of staircase structures defined in the plurality of electrode stacks, each of the plurality of staircase structures configured by pad regions of electrode layers in an electrode stack that are disposed in a staircase shape, a staircase structure of an electrode stack lower in the plurality of electrode stacks has a larger width than a staircase structure of an electrode stack that is higher in the plurality of electrode stacks.

Dependencies are inferred from the claim text.